1. Crystallography and Product Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its remarkable polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically appropriate polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal forms 4H-SiC and 6H-SiC, each exhibiting subtle variants in bandgap, electron wheelchair, and thermal conductivity that influence their viability for particular applications.
The stamina of the Si– C bond, with a bond energy of roughly 318 kJ/mol, underpins SiC’s phenomenal firmness (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
In ceramic plates, the polytype is typically selected based upon the intended usage: 6H-SiC prevails in structural applications due to its convenience of synthesis, while 4H-SiC controls in high-power electronics for its premium fee provider wheelchair.
The broad bandgap (2.9– 3.3 eV depending upon polytype) likewise makes SiC an excellent electric insulator in its pure type, though it can be doped to function as a semiconductor in specialized digital devices.
1.2 Microstructure and Stage Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is seriously depending on microstructural attributes such as grain size, density, phase homogeneity, and the presence of second stages or pollutants.
Top notch plates are typically made from submicron or nanoscale SiC powders with advanced sintering methods, causing fine-grained, fully dense microstructures that make best use of mechanical stamina and thermal conductivity.
Impurities such as totally free carbon, silica (SiO TWO), or sintering help like boron or light weight aluminum need to be carefully managed, as they can form intergranular movies that minimize high-temperature strength and oxidation resistance.
Residual porosity, even at reduced levels (
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