1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its impressive polymorphism– over 250 known polytypes– all sharing strong directional covalent bonds but differing in stacking sequences of Si-C bilayers.
One of the most technologically appropriate polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal forms 4H-SiC and 6H-SiC, each showing refined variants in bandgap, electron movement, and thermal conductivity that influence their suitability for certain applications.
The stamina of the Si– C bond, with a bond power of approximately 318 kJ/mol, underpins SiC’s remarkable hardness (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is commonly selected based upon the planned use: 6H-SiC is common in architectural applications because of its ease of synthesis, while 4H-SiC dominates in high-power electronics for its superior cost service provider mobility.
The wide bandgap (2.9– 3.3 eV relying on polytype) likewise makes SiC a superb electric insulator in its pure type, though it can be doped to operate as a semiconductor in specialized digital devices.
1.2 Microstructure and Phase Purity in Ceramic Plates
The efficiency of silicon carbide ceramic plates is seriously dependent on microstructural attributes such as grain dimension, thickness, phase homogeneity, and the existence of additional phases or impurities.
High-quality plates are commonly fabricated from submicron or nanoscale SiC powders via sophisticated sintering techniques, causing fine-grained, fully dense microstructures that optimize mechanical toughness and thermal conductivity.
Impurities such as complimentary carbon, silica (SiO TWO), or sintering help like boron or aluminum need to be carefully regulated, as they can develop intergranular films that minimize high-temperature stamina and oxidation resistance.
Residual porosity, also at reduced levels (
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