1. Product Science and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms organized in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting phenomenal atomic bond stamina.
The Si– C bond, with a bond energy of around 318 kJ/mol, is amongst the toughest in architectural porcelains, giving superior thermal stability, firmness, and resistance to chemical attack.
This robust covalent network results in a material with a melting factor surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical strength and creep resistance at temperatures over 1400 ° C, where numerous steels and traditional ceramics begin to soften or deteriorate.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal biking without tragic breaking, a crucial quality for crucible efficiency.
These inherent buildings originate from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which advertise a highly stable and largely loaded crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive role in durability and thermal shock resistance.
Sintered SiC crucibles are created via solid-state or liquid-phase sintering at temperatures over 2000 ° C, usually with boron or carbon additives to improve densification and grain boundary communication.
This procedure produces a fully dense, fine-grained framework with minimal porosity (
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