1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms arranged in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting exceptional atomic bond strength.
The Si– C bond, with a bond power of about 318 kJ/mol, is amongst the strongest in architectural ceramics, providing exceptional thermal security, firmness, and resistance to chemical assault.
This durable covalent network leads to a product with a melting point surpassing 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 ° C, where many metals and standard porcelains begin to soften or weaken.
Its reduced coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) allows quick thermal cycling without devastating splitting, a crucial quality for crucible efficiency.
These intrinsic residential or commercial properties come from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote an extremely steady and largely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are typically fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in toughness and thermal shock resistance.
Sintered SiC crucibles are generated via solid-state or liquid-phase sintering at temperatures over 2000 ° C, typically with boron or carbon additives to boost densification and grain boundary communication.
This process produces a totally dense, fine-grained structure with minimal porosity (
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